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2SD1856 |
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| Part Number | 2SD1856 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
erwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
MIN TYP. MAX UNIT
50
70
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
50
70
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
COB
Output Capacitance
IC= 2A; IB= 2mA
2.0
V
VCB= 40V; IE= 0
10
μA
VEB= 5V; IC= 0
3.0
mA
IC= 2A; VCE= 3V
2000
30000
IE= 0 ; VCB= 10V,ftest= 1MHz
75
pF
NOTICE： ISC reserves th... |
| Document |
 2SD1856 Data Sheet
PDF 184.58KB |
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Desde 2024. D4U Semiconductor.
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