2SD1857 |
Part Number | 2SD1857 |
Manufacturer | Inchange Semiconductor |
Description | ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236 ·Minimum Lot-to-Lot variations for robust device perform... |
Features |
ge IC= 1A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 5V
COB
Output Capacitance
IE=0; VCB= 10V, ftest= 1MHz
2SD1857
MIN TYP. MAX UNIT
2
V
1.5
V
1.0 μA
1.0 μA
120
390
50
MHz
30
pF
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th... |
Document |
2SD1857 Data Sheet
PDF 206.11KB |
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