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2SD1888 |
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| Part Number | 2SD1888 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1339 ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
T
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3
mA
hFE
DC Current Gain
IC= 2A; VCE= 3V
2000
20000
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
50
pF
fT
Current-Gain—Bandwidth Product
IE= -0.2A; VCE= 5V; ftest= 10MHz
40
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet ... |
| Document |
 2SD1888 Data Sheet
PDF 206.19KB |
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