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Inchange Semiconductor |
Silicon NPN Power Transistor nless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1 |
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Inchange Semiconductor |
Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO |
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INCHANGE |
NPN Transistor PARAMETER -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case isc website： www.iscsemi.com 1.0 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUX48A ELECTRICAL CHARACTERISTICS TC=2 |
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INCHANGE |
NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCBO(SUS) Collector-Base Sustaining Voltage IC= 1mA; IE= 0 VCE(sat)-1 Collector-Emitter Sat |
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INCHANGE |
NPN Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; |
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INCHANGE |
NPN Transistor Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Em |
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Inchange Semiconductor |
Silicon NPN Power Transistor Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(s |
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Inchange Semiconductor |
Silicon NPN Power Transistor con NPN Power Transistor BUX11N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 V |
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Inchange Semiconductor |
Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO |
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INCHANGE |
NPN Transistor HANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUX87 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Voltage IC=100mA VBEO Emitter-Base Voltage |
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INCHANGE |
NPN Transistor ing Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A ICEO Collector Cutoff Current VCE= 250V; IB=0 ICBO Collector Cutoff Current VCB= 300V, IE=0 |
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INCHANGE |
NPN Transistor ww.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX67/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX67 VCEO(SUS) Collector-Emitter Sustaining Volta |
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INCHANGE |
NPN Transistor ance,Junction to Case MAX 1.75 UNIT ℃/W BUX16/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX16/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME |
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INCHANGE |
NPN Transistor on NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE |
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Inchange Semiconductor |
Silicon NPN Power Transistor emark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA; |
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Inchange Semiconductor |
Silicon NPN Power Transistor j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX31/A/B · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA |
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Inchange Semiconductor |
Silicon NPN Power Transistor c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX32/A/B · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARA |
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Inchange Semiconductor |
Silicon NPN Power Transistor nsistor BUX21 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; |
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Inchange Semiconductor |
Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO |
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Inchange Semiconductor |
Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO |
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Desde 2024. D4U Semiconductor.
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