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INCHANGE |
NPN Transistor less otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICES |
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Inchange Semiconductor |
Silicon NPN Power Transistor CAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation V |
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INCHANGE |
NPN Transistor j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W BUL49 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL49 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETE |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor emi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL49D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10m |
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Inchange Semiconductor |
Silicon NPN Power Transistor staining Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Satura |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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INCHANGE |
NPN Transistor mal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL128 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL |
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INCHANGE |
NPN Transistor ,Junction to Ambient 62.5 ℃/W BUL312 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL312 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T |
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INCHANGE |
NPN Transistor NS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.1A; IB= 20mA |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor onductor isc Silicon NPN Power Transistor isc Product Specification BUL39D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= |
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Inchange Semiconductor |
Silicon NPN Power Transistor HANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL118D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Sustaining Voltage IC= 100mA ; L= 25 mH V(BR)EBO Emitter-Base Breakdown Voltage IEB= 10mA; IC=0 VCE(sat)-1 Collector-Emit |
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Inchange Semiconductor |
Silicon NPN Power Transistor ower Transistor isc Product Specification BUL44 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH VCE(sat)-1 VCE(sat)- |
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Inchange Semiconductor |
Silicon NPN Power Transistors Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL38D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PA |
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INCHANGE |
NPN Transistor www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL6825 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA |
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INCHANGE |
NPN Transistor US) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A |
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Desde 2024. D4U Semiconductor.
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