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BUL312 |
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| Part Number | BUL312 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variat... |
| Features |
,Junction to Ambient 62.5 ℃/W
BUL312
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUL312
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0
500
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
9
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
0.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
0.7
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3... |
| Document |
 BUL312 Data Sheet
PDF 207.56KB |
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Desde 2024. D4U Semiconductor.
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