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BUL118D Inchange Semiconductor Silicon NPN Power Transistor Datasheet


Inchange Semiconductor
BUL118D
Part Number BUL118D
Manufacturer Inchange Semiconductor
Description ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P...
Features HANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL118D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A VBE(sat)-2 Base-Emitter Satu...

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