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BUL1102E INCHANGE NPN Transistor Datasheet

BUL1102E 트랜지스터 - 양극(BJT) - 단일 NPN 450V 4A 70W 스루홀 TO-220


INCHANGE
BUL1102E
BUL1102E
Part Number BUL1102E
Manufacturer INCHANGE
Description ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Four lamp electronic ballsat for : 120v mains in push-pull configuration ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol...
Features less otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICES Collector Cutoff Current VCE= 1100V; VBE= 0 IEBO Collector Cutoff Current VCE= 12V; IB= 0 hFE-1 DC Current Gain IC= 250mA; VCE= 5V hFE-2 DC Current Gain IC= 2A; VCE= 5V BUL1102E MIN TYP. MAX UNIT 450 V 1.5 V 1.5 V 0.1 mA 1 mA 35 70 12 20 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet ...

Document Datasheet BUL1102E datasheet pdf (204.03KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
5000 units: 822.176 KRW
2500 units: 863.284 KRW
1250 units: 917.0368 KRW
500 units: 1125.74 KRW
250 units: 1315.484 KRW
100 units: 1328.09 KRW
50 units: 1675.88 KRW
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BUL1102E Distributor

part
STMicroelectronics
BUL1102E
TRANSISTOR, NPN, TO-220
5000 units: 842 KRW
1000 units: 947 KRW
500 units: 1076 KRW
100 units: 1269 KRW
10 units: 1606 KRW
1 units: 1957 KRW
Distributor
element14 Asia-Pacific

406 In Stock
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part
STMicroelectronics
BUL1102E
트랜지스터 - 양극(BJT) - 단일 NPN 450V 4A 70W 스루홀 TO-220
5000 units: 822.176 KRW
2500 units: 863.284 KRW
1250 units: 917.0368 KRW
500 units: 1125.74 KRW
250 units: 1315.484 KRW
100 units: 1328.09 KRW
50 units: 1675.88 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL1102E
Bipolar Transistors - BJT High volt fast-switching NPN power transistor
1 units: 1.45 USD
10 units: 1.17 USD
100 units: 0.94 USD
500 units: 0.797 USD
1000 units: 0.649 USD
2000 units: 0.598 USD
5000 units: 0.569 USD
10000 units: 0.56 USD
Distributor
Mouser Electronics

1104 In Stock
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part
STMicroelectronics
BUL1102E
High voltage fast-switching NPN power transistor
1 units: 1.42 USD
10 units: 1.15 USD
100 units: 0.92 USD
500 units: 0.78 USD
Distributor
STMicroelectronics

1104 In Stock
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part
STMicroelectronics
BUL1102E
2000 units: 0.336 USD
Distributor
Future Electronics

0 In Stock
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part
STMicroelectronics
BUL1102EFP
216 units: 2.1548 USD
81 units: 2.3205 USD
1 units: 4.9725 USD
Distributor
Quest Components

760 In Stock
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part
STMicroelectronics
BUL1102E
Transistor: NPN; bipolar; 450V; 4A; 70W; TO220AB; 1.23÷1.32mm
500 units: 0.83 USD
100 units: 0.91 USD
50 units: 0.98 USD
10 units: 1.18 USD
1 units: 1.39 USD
Distributor
TME

120 In Stock
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part
STMicroelectronics
BUL1102E
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Power Bipolar Transistor, 4A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
No price available
Distributor
ComSIT Asia

350 In Stock
No Longer Stocked
part
STMicroelectronics
BUL1102E
Trans GP BJT NPN 450V 4A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: BUL1102E)
6000 units: 0.36061 USD
4000 units: 0.36836 USD
2000 units: 0.37612 USD
Distributor
Avnet Americas

0 In Stock
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part
STMicroelectronics
BUL1102E
Trans GP BJT NPN 450V 4A 3-Pin(3+Tab) TO-220 Tube (Alt: BUL1102E)
No price available
Distributor
Avnet Silica

2000 In Stock
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BUL1102E Similar Datasheet

Part Number Description
BUL1101E
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 11...
BUL1102E
manufacturer
STMicroelectronics
High voltage fast-switching NPN power transistor
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram C (2, TAB) (1) B E (3) Table 1. Device summary Marking BUL1102E BUL1102EFP Package TO-220 TO-220FP Packaging Tube Tube Order codes BUL1102E BUL1102E...




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