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BUL128 |
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| Part Number | BUL128 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust ... |
| Features |
mal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BUL128
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;Ib=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VCE(... |
| Document |
 BUL128 Data Sheet
PDF 208.26KB |
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