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INCHANGE |
NPN Transistor mbient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Brea |
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Inchange Semiconductor |
Silicon NPN Power Transistor mi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 10mA; IB= 0 V |
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INCHANGE |
Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751 BD751A IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751 IC= 7.5A; IB= 0.75A BD |
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INCHANGE |
PNP Transistor Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750B BD750C IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750B IC= - |
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INCHANGE |
PNP Transistor Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750B BD750C IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750B IC= - |
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INCHANGE |
PNP Transistor scsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD746/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD746 -45 V(BR)CEO Collector-Emitter |
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INCHANGE |
NPN Transistor ilicon NPN Power Transistor BD797 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Satu |
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INCHANGE |
PNP Transistor er Transistor BD788 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA |
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INCHANGE |
PNP Transistor is registered trademark isc Silicon PNP Power Transistor BD712 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter |
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INCHANGE |
PNP Transistor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= |
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INCHANGE |
NPN Transistor d trademark isc Silicon NPN Power Transistor BD707 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation V |
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Inchange Semiconductor |
Silicon PNP Power Transistor Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) B |
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INCHANGE |
Silicon PNP Power Transistors sistors BD750/750A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750 BD750A IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750 |
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INCHANGE |
Silicon PNP Power Transistors sistors BD750/750A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750 BD750A IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750 |
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INCHANGE |
Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751 BD751A IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751 IC= 7.5A; IB= 0.75A BD |
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INCHANGE |
NPN Transistor tors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751B BD751C IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751B IC= 7.5A; IB= 0. |
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INCHANGE |
NPN Transistor tors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751B BD751C IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751B IC= 7.5A; IB= 0. |
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INCHANGE |
PNP Transistor scsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD746/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD746 -45 V(BR)CEO Collector-Emitter |
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INCHANGE |
PNP Transistor scsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD746/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD746 -45 V(BR)CEO Collector-Emitter |
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INCHANGE |
NPN Transistor semi is registered trademark isc Silicon NPN Power Transistor BD745/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD745 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD7 |
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Desde 2024. D4U Semiconductor.
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