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BD788 |
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| Part Number | BD788 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40~250(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD787 ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
er Transistor
BD788
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Voltage
Sustaining IC= -10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
MIN TYP. MAX UNIT
-60
V
-0.4 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
-0.6 V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
-0.8 V
VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.8A
-2.5 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= 0.2A
-2.0 V
VBE(on) Base-Emi... |
| Document |
 BD788 Data Sheet
PDF 206.44KB |
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Desde 2024. D4U Semiconductor.
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