BD751C |
Part Number | BD751C |
Manufacturer | INCHANGE |
Description | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C ·Minimum Lot-to-Lot variations for robust device per... |
Features |
tors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD751B BD751C
IC=50mA ; IB=0
VCE(sat)
Collector-Emitter Saturation Voltage
BD751B IC= 7.5A; IB= 0.75A BD751C IC= 5A; IB= 0.5A
VBE(sat)
Base-Emitter Saturation Voltage
BD751B IC= 7.5A; IB= 0.75A BD751C IC= 5A; IB= 0.5A
ICEV
Collector Cutoff Current
BD751B
VCEV= 110V;VBE(off)= 1.5V
BD751C
VCEV= 140V;VBE(off)= 1.5V
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
BD751B IC= 7.5A ; VCE= 2V BD751C IC= 5A ; VCE= 2V
BD751B... |
Document |
BD751C Data Sheet
PDF 203.59KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD751 |
INCHANGE |
Silicon NPN Power Transistors | |
2 | BD751A |
INCHANGE |
Silicon NPN Power Transistors | |
3 | BD751B |
INCHANGE |
NPN Transistor | |
4 | BD750 |
INCHANGE |
Silicon PNP Power Transistors | |
5 | BD750A |
INCHANGE |
Silicon PNP Power Transistors | |
6 | BD750B |
INCHANGE |
PNP Transistor |