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BD712 |
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| Part Number | BD712 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) ·Complement to Type BD711 ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
is registered trademark
isc Silicon PNP Power Transistor
BD712
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -4V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -50V; IB= 0
VCB= -100V; IE= 0 VCB= -100V; IE= 0; TC= 150℃
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -2A; VCE= -... |
| Document |
 BD712 Data Sheet
PDF 190.63KB |
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Desde 2024. D4U Semiconductor.
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