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BD791 |
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| Part Number | BD791 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = ... |
| Features |
mi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BD791
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Voltage
Sustaining IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VCE(sat)-4 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
VBE(on) ICEX ICEO
Base-E... |
| Document |
 BD791 Data Sheet
PDF 208.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD790 |
Motorola Inc |
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| 2 | BD7902CFS |
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| 3 | BD7904FS |
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| 4 | BD7905BFS |
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| 5 | BD7907FS |
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| 6 | BD791 |
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Desde 2024. D4U Semiconductor.
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