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Inchange Semiconductor |
TO-220C Three Terminal Negative Voltage Regulator ·Output current in excess of 1A ·Output voltage of -5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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Inchange Semiconductor |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1.0A ·Output voltage of -9V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta= |
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INCHANGE |
3-Terminal Negative Voltage Regulator ·Output current in excess of 1.0A ·Output voltage of -6V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta= |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A IGSS Gate Source Leaka |
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INCHANGE |
TO-252 Three Terminal Negative Voltage Regulator ·Output current in excess of 1A ·Output voltage of -5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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Inchange Semiconductor |
Silicon PNP Power Transistor ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hF |
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Inchange Semiconductor |
Silicon NPN Transistor METER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20 |
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INCHANGE |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of -8V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta= |
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Inchange Semiconductor |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1.5 A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOL |
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Inchange Semiconductor |
Silicon NPN Power Transistor at) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE |
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INCHANGE |
NPN Transistor NGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 2mA VBE(sat) Base-Emitter |
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Desde 2024. D4U Semiconductor.
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