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2SC3790 |
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| Part Number | 2SC3790 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Complement to Type 2SA1480 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
METER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 20mA; IB= 2mA VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 30V
COB
Output Capacitance
IE= 0; VCB= 30V, ftest= 1MHz
MIN TYP. MAX UNIT
300
V
3... |
| Document |
 2SC3790 Data Sheet
PDF 187.00KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3790 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3790 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC3792 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC3793 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3793 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3794 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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