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2N3790 |
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| Part Number | 2N3790 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi... |
| Features |
ing Voltage IC=-200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A
VBE(ON)-1 Base-Emitter On Voltage
IC=-5A; VCE=-2V
VBE(ON)-2 Base-Emitter On Voltage
IC=-10A; VCE=-4V
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
fT
Current Gain-Bandwidth Product
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= -0.5A; VCE= -10V; f= 1.0MHz
2N3790
MIN MAX UNIT
-80
V
-5
mA
-1.0
V
-2.0
V
-4.0
V
25
90
15
4
MHz
NOTICE： ISC reserves the rights to make changes of the content her... |
| Document |
 2N3790 Data Sheet
PDF 184.36KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N379 |
Motorola |
PNP Transistor |
|
| 2 | 2N3790 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
| 3 | 2N3790 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | 2N3790 |
Motorola |
PNP silicon power transistors |
|
| 5 | 2N3790 |
Comset Semiconductor |
EPITAXIAL-BASE TRANSISTORS |
|
| 6 | 2N3791 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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