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2SD1790 |
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| Part Number | 2SD1790 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequenc... |
| Features |
NGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1790
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 1A, VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 0.4A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
... |
| Document |
 2SD1790 Data Sheet
PDF 197.10KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1790 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 2 | 2SD1791 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1791 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 4 | 2SD1792 |
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor |
|
| 5 | 2SD1792 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SD1793 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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