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2SK790 |
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| Part Number | 2SK790 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
ICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IF= 15A; VGS=0
2SK790
MIN TYP MAX UNIT
500
V
2.0
4.0
V
0.40
Ω
±100 nA
300
uA
2.0
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con... |
| Document |
 2SK790 Data Sheet
PDF 247.50KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK790 |
Toshiba |
TRANSISTOR |
|
| 2 | 2SK791 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK791 |
Toshiba Semiconductor |
Transistor |
|
| 4 | 2SK792 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK792 |
Toshiba Semiconductor |
Transistor |
|
| 6 | 2SK793 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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