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| Part Number | 2SK793 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK793 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=850V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching re. |
| Features | L CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=850V; VGS= 0 2SK793 MIN TYP MAX UNIT 850 V 1.5 3.5 V 2.1 2.5 Ω ±100 n. |
| Part Number | 2SK793 |
| Manufacturer | Toshiba Semiconductor |
| Title | Transistor |
| Description | www.DataSheet4U.com . |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK790 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK790 |
Toshiba |
TRANSISTOR |
|
| 3 | 2SK791 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK791 |
Toshiba Semiconductor |
Transistor |
|
| 5 | 2SK792 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK792 |
Toshiba Semiconductor |
Transistor |
|
| 7 | 2SK794 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK794 |
Toshiba Semiconductor |
Transistor |
|
| 9 | 2SK796 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK796 |
Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
|
Desde 2024. D4U Semiconductor.
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