Busque con el número de pieza junto con el fabricante o la descripción
2SK793 |
Click to view a larger image
| Part Number | 2SK793 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=850V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
L CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=850V; VGS= 0
2SK793
MIN TYP MAX UNIT
850
V
1.5
3.5
V
2.1
2.5
Ω
±100 nA
300
uA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the ... |
| Document |
 2SK793 Data Sheet
PDF 237.56KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK790 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK790 |
Toshiba |
TRANSISTOR |
|
| 3 | 2SK791 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK791 |
Toshiba Semiconductor |
Transistor |
|
| 5 | 2SK792 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK792 |
Toshiba Semiconductor |
Transistor |
|
Desde 2024. D4U Semiconductor.
|