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INCHANGE |
NPN Transistor E(sat)-1 Collector-Emitter Saturation Voltage IC=150mA ,IB= 15mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=500mA ,IB= 50mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=150mA ,IB= 15mA VBE(sat)-2 Base-Emitter Saturation Voltage IC=500mA |
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Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 |
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INCHANGE |
NPN Transistor ector-Emitter Sustaining Voltage IC=30mA ; IB=0 ICEO Collector Cutoff Current VCE= 60V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz |
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Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 |
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Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 |
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INCHANGE |
NPN Transistor ector-Emitter Sustaining Voltage IC=30mA ; IB=0 ICEO Collector Cutoff Current VCE= 60V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz |
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INCHANGE |
NPN Transistor ector-Emitter Sustaining Voltage IC=30mA ; IB=0 ICEO Collector Cutoff Current VCE= 60V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz |
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Inchange Semiconductor |
Silicon NPN Power Transistor tter Sustaining Voltage IC=200mA; IB= 0 ICEO Collector Cutoff Current VCE=100V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A; IB= 500mA VCE(sat)-2* Collector-Emitter Saturation Voltag |
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INCHANGE |
NPN Transistor i is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N4922 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage |
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INCHANGE |
NPN Transistor ector-Emitter Sustaining Voltage IC=30mA ; IB=0 ICEO Collector Cutoff Current VCE= 60V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz |
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INCHANGE |
NPN Transistor VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 ICBO Collector Cutoff Current VCE=500V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 VCE(sat)* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)* Base-Emitter S |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor Sustaining Voltage IC=30mA; IB= 0 ICEO Collector Cutoff Current VCE=60V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain *:Pulse test:Pulse width=300us,duty cycle≤2% IC=2A; VCE= 1V 2N4396 MIN MAX UNIT 60 V 1 mA 0 |
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Inchange Semiconductor |
Silicon PNP Power Transistor herwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -40V; IB=0 IEBO Emitter Cutoff |
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Inchange Semiconductor |
Silicon PNP Power Transistor herwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -40V; IB=0 IEBO Emitter Cutoff |
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INCHANGE |
NPN Transistor taining Voltage IC=100mA; IB= 0 ICEO Collector Cutoff Current VCE=50V;IB= 0 ICEX Collector-Emitter Leakage current VCE=60V,VBE(OFF)=1.5V ICBO Collector Cutoff Current VCE=60V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 VCE(sat)-1* C |
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INCHANGE |
NPN Transistor taining Voltage IC=100mA; IB= 0 ICEO Collector Cutoff Current VCE=80V;IB= 0 ICEX Collector-Emitter Leakage current VCE=80V,VBE(OFF)=1.5V ICBO Collector Cutoff Current VCE=80V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 VCE(sat)-1* C |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor Sustaining Voltage IC=30mA; IB= 0 ICEO Collector Cutoff Current VCE=40V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain *:Pulse test:Pulse width=300us,duty cycle≤2% IC=2A; VCE= 1V 2N4395 MIN MAX UNIT 40 V 200 mA |
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Desde 2024. D4U Semiconductor.
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