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2N4113 NPN Transistor

2N4113

2N4113
2N4113 2N4113
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Part Number 2N4113
Manufacturer INCHANGE
Description ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1.
Features ector-Emitter Sustaining Voltage IC=30mA ; IB=0 ICEO Collector Cutoff Current VCE= 60V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz 2N4113 MIN MAX UNIT 80 V 0.1 mA 1 mA 40 120 50 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. Th.
Datasheet Datasheet 2N4113 Data Sheet
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2N4113

Seme LAB
2N4113
Part Number 2N4113
Manufacturer Seme LAB
Title Bipolar NPN Device
Description 2N4113 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 .
Features .


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