Distributor | Stock | Price | Buy |
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2N4112 |
Part Number | 2N4112 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
Features | ector-Emitter Sustaining Voltage IC=30mA ; IB=0 ICEO Collector Cutoff Current VCE= 60V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz 2N4112 MIN MAX UNIT 60 V 0.1 mA 1 mA 100 200 60 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at a. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N4111 |
INCHANGE |
NPN Transistor | |
2 | 2N4111 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N4113 |
INCHANGE |
NPN Transistor | |
4 | 2N4113 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N4114 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N4114 |
INCHANGE |
NPN Transistor | |
7 | 2N4117 |
Calogic LLC |
N-Channel JFET General Purpose Amplifier | |
8 | 2N4117 |
InterFET |
N-Channel JFET | |
9 | 2N4117 |
Motorola |
JFET | |
10 | 2N4117 |
Solitron Devices |
N-Channel JFET |