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2N4903 (2N4901 - 2N4903) Silicon PNP Power Transistors

2N4903

2N4903
2N4903 2N4903
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Part Number 2N4903
Manufacturer Inchange Semiconductor
Description ¡¤With TO-3 package ¡¤Complement to type 2N5067/5068/5069 ¡¤Low collector saturation voltage APPLICATIONS ¡¤For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=¡æ ) SYMBOL PARAMETER www.DataSheet.net/ CONDITIONS 2N4901 VA.
Features f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-1A; IB=-0.1A IC=-5A ;IB=-1A IC=-1A ; VCE=-2V .
Datasheet Datasheet 2N4903 Data Sheet
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2N4903

Comset Semiconductor
2N4903
Part Number 2N4903
Manufacturer Comset Semiconductor
Title (2N4901 - 2N4903) PNP Silicon Transistors
Description 2N4901 – 2N4902 – 2N4903 PNP SILICON TRANSISTORS, EPITAXIAL BASE The 2N4901, 2N4902, 2N4903 are mounted in Jedec TO-66 metal case. They are intended for general–purpose switching and power amplifier applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector to Base V.
Features .3 Unit °C/W °C/W 13 17/10/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N4901
  – 2N4902
  – 2N4903 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Collector-Emitter Breakdown Voltage) Collector-Base cut-off Current Test Condition(s) IC=200 mAdc, IB=0 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 Min -40 -60 -80 - Typ - Max 0.1 0.1 0.1 -0.1 -2.0 -0.1 -2.0.


2N4903

Motorola
2N4903
Part Number 2N4903
Manufacturer Motorola
Title PNP power transistors
Description 2N490 1(SILICON) 2N4902 2N4903 CASE 11 (TO·3) PNP power transistors for use in power amplifier and switching circuits. Complement to NPN 2N5067, 2N5068, 2N5069. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current .
Features .


2N4903

Central Semiconductor
2N4903
Part Number 2N4903
Manufacturer Central Semiconductor
Title Silicon power Transistor
Description Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .
Features .


2N4903

Seme LAB
2N4903
Part Number 2N4903
Manufacturer Seme LAB
Title Bipolar PNP Device
Description 2N4903 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 .
Features .


2N4903

Solitron Devices
2N4903
Part Number 2N4903
Manufacturer Solitron Devices
Title N-Channel JFET
Description The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening .
Features LOW NOISE: 1.2 NV/√HZ TYPICAL FAST SWITCHING Gate 3 DESCRIPTION The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - Consult Factory. Dra.


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