Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N4232A |
| Part Number | 2N4232A |
| Manufacturer | Seme LAB |
| Title | Bipolar NPN Device |
| Description | 2N4232A Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 . |
| Features | . |
2N4232A |
| Part Number | 2N4232A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃. |
| Features | taining Voltage IC=100mA; IB= 0 ICEO Collector Cutoff Current VCE=50V;IB= 0 ICEX Collector-Emitter Leakage current VCE=60V,VBE(OFF)=1.5V ICBO Collector Cutoff Current VCE=60V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-3* Collector-Emit. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4232 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N4232 |
Motorola |
Medium-power NPN silicon transistors |
|
| 3 | 2N4231 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N4231 |
Motorola |
Medium-power NPN silicon transistors |
|
| 5 | 2N4231 |
INCHANGE |
NPN Transistor |
|
| 6 | 2N4231A |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 7 | 2N4233 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N4233 |
Motorola |
Medium-power NPN silicon transistors |
|
| 9 | 2N4233A |
INCHANGE |
NPN Transistor |
|
| 10 | 2N4233A |
Mospec Semiconductor |
POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
|