Huajing Microelectronics CS4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	CS40N20ANH	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwi
2	CS4J60FA9	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 600 V 4A 25 W 1.5 Ω Symbo
3	CS4N60A4HD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc
4	CS4N65FA9R-G	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charge
5	CS4N60A4TDY	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω Applications： Power
6	CS4N65FA9R	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
7	CS4N60FA9TDY	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T
8	CS4N80A3HD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2
9	CS4J60A3-G	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 600 V 4A 90
10	CS4J60B3-G	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 600 V 3.5 A
11	CS4J60FA9-G	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 600 V 4A 25
12	CS4N60A8HD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
13	CS4N60ARRD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
14	CS4N65A8HD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
15	CS4N65A4TDY	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2
16	CS4N70A3HD-G	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25
17	CS4N60FA9R	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute
18	CS40N20A8	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwi
19	CS4N60A3HD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc
20	CS4N60A7HD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test 600 V 4A 30 W 1.8 Ω Applications： Power switch circuit of adaptor