CS4N60A7HD |
Part Number | CS4N60A7HD |
Manufacturer | Huajing Microelectronics |
Description | CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performanc... |
Features |
l Fast Switching l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test
600 V 4A 30 W 1.8 Ω
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100... |
Document |
CS4N60A7HD Data Sheet
PDF 339.75KB |
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