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CS4J60B3-G |
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| Part Number | CS4J60B3-G |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. Th... |
| Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
○R
600 V 3.5 A 56 W 2.0 Ω
Symbol
VDSS
ID IDMa1 VGSS EAS a2 dv/dt a3
PD TJ，Tstg
TL
Parameter Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Diss... |
| Document |
 CS4J60B3-G Data Sheet
PDF 351.54KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS4J60A3-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 2 | CS4J60FA9 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 3 | CS4J60FA9-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 4 | CS400 |
High Voltage Power Solutions |
High Voltage Bridge Rectifiers |
|
| 5 | CS4041 |
Chips |
CHIP set |
|
| 6 | CS4050V-01L |
Coilcraft |
Current Sense Transformers |
|
Desde 2024. D4U Semiconductor.
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