CS4J60FA9-G |
Part Number | CS4J60FA9-G |
Manufacturer | HUAJING MICROELECTRONICS |
Description | CS4J60F A9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. T... |
Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
○R
600 V 4A 25 W 1.5 Ω
Symbol
VDSS
ID IDMa1 VGSS EAS a2 dv/dt a3
PD TJ,Tstg
TL
Parameter Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Diss... |
Document |
CS4J60FA9-G Data Sheet
PDF 340.56KB |
Similar Datasheet
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1 | CS4J60FA9 |
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Silicon N-Channel Power MOSFET | |
2 | CS4J60A3-G |
HUAJING MICROELECTRONICS |
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3 | CS4J60B3-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
4 | CS400 |
High Voltage Power Solutions |
High Voltage Bridge Rectifiers | |
5 | CS4041 |
Chips |
CHIP set | |
6 | CS4050V-01L |
Coilcraft |
Current Sense Transformers |