CS4N60FA9TDY Huajing Microelectronics Silicon N-Channel Power MOSFET Datasheet. existencias, precio

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CS4N60FA9TDY

Huajing Microelectronics
CS4N60FA9TDY
CS4N60FA9TDY CS4N60FA9TDY
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Part Number CS4N60FA9TDY
Manufacturer Huajing Microelectronics
Description CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanc...
Features l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage S...

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