Hitachi Semiconductor K27 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2796	Hitachi Semiconductor	2SK2796 • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratin
2	2SK2796L	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to so
3	2SK2735L	Hitachi Semiconductor	Silicon N-Channel MOS FET • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 2
4	2SK2735S	Hitachi Semiconductor	Silicon N-Channel MOS FET • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 2
5	2SK2738	Hitachi Semiconductor	N-CHANNEL MOS FET • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2738 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G
6	4AK27	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absol
7	2SK2725	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2725 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
8	2SK2735	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 2
9	2SK2736	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage
10	2SK2788	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) It
11	2SK2796S	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to so
12	K2737	Hitachi Semiconductor	2SK2737 • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
13	2SK2726	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2726 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
14	2SK2727	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2727 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage
15	2SK2728	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2728 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage
16	2SK2729	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage
17	2SK2730	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2730 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage
18	2SK2734	Hitachi Semiconductor	Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Dra
19	2SK2737	Hitachi Semiconductor	N-Channel MOSFET • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage
20	2SK2796	Hitachi Semiconductor	Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to so