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2SK2735L |
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| Part Number | 2SK2735L |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can b... |
| Features |
• Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 20 80 20 20 150 –55 to +15... |
| Document |
 2SK2735L Data Sheet
PDF 39.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2735 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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| 2 | 2SK2735S |
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| 3 | 2SK2730 |
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| 4 | 2SK2730 |
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| 5 | 2SK2731 |
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| 6 | 2SK2731 |
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Desde 2024. D4U Semiconductor.
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