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2SK2725 |
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| Part Number | 2SK2725 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2725 Silicon N Channel MOS FET High Speed Power Switching ADE-208-452 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ra... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2725 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±3... |
| Document |
 2SK2725 Data Sheet
PDF 49.74KB |
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Desde 2024. D4U Semiconductor.
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