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2SK2737 |
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| Part Number | 2SK2737 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B(Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching ... |
| Features |
• Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 45 180 45 30 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics... |
| Document |
 2SK2737 Data Sheet
PDF 47.53KB |
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