Busque con el número de pieza junto con el fabricante o la descripción
2SK2736 |
Click to view a larger image
| Part Number | 2SK2736 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High sp... |
| Features |
• Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 30 120 30 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SK... |
| Document |
 2SK2736 Data Sheet
PDF 34.88KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2730 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | 2SK2730 |
Renesas |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2731 |
Rohm |
Transistor |
|
| 4 | 2SK2731 |
Kexin |
N-Channel MOSFET |
|
| 5 | 2SK2733 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 6 | 2SK2734 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|