No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: UPS,Inverter,Lighting. Absolute(Tc= 25℃ unless otherwi |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): ○R 600 V 4A 25 W 1.5 Ω Symbo |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications: Power switch circuit of adaptor and charge |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω Applications: Power |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(T |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 2 |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): ○R 600 V 4A 90 |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): ○R 600 V 3.5 A |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): ○R 600 V 4A 25 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 2 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: UPS,Inverter,Lighting. Absolute(Tc= 25℃ unless otherwi |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test 600 V 4A 30 W 1.8 Ω Applications: Power switch circuit of adaptor |
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