GaN Systems GS- Hoja de datos

No.	parte #	Fabricante	Descripción
1	GS66516T	GaN Systems	Top cooled 650V enhancement mode GaN transistor • 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) •
2	GS-065-004-1-L	GaN Systems	650V E-mode GaN transistor • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 450 mΩ • IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) •
3	GS66508P	GaN Systems	Bottom-side cooled 650V E-mode GaN transistor • 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • Low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate
4	GS66504B	GaN Systems	650V enhancement mode GaN transistor • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 100 mΩ • IDS(max) = 15 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V
5	GS61008P	GaN Systems	100V enhancement mode GaN transistor • 100 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V /
6	GS-065-014-6-L	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 95 mΩ • IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V)
7	GS-065-014-6-LR	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95 mΩ • IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V)
8	GS-065-018-2-L	GaN Systems	650V E-mode GaN transistor • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 78 mΩ • IDSmax,DC = 18 A / IDsmax,Pulse = 35 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gat
9	GS-065-030-6-LL	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (
10	GS-065-030-2-L	GaN Systems	650V E-mode GaN transistor • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 50 mΩ • IDS,max = 30 A / IDSmax,Pulse = 60 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate
11	GS-065-060-5-B-A	GaN Systems	Automotive 650V GaN E-mode transistor • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Bottom-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient toler
12	GS66516B	GaN Systems	Bottom-side cooled 650V E-mode GaN transistor • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10
13	GS-065-011-2-L	GaN Systems	650V E-mode GaN transistor • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • IDS,max = 11 A / IDSmax,Pulse = 19A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient
14	GS-065-008-6-L	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V)
15	GS-065-011-1-L	GaN Systems	650V E-mode GaN transistor • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 150 mΩ • IDSmax,DC = 11 A / IDSmax,Pulse = 19A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) •
16	GS-065-008-1-L	GaN Systems	650V E-mode GaN transistor • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 225 mΩ • IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) •
17	GS-065-004-6-L	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 315 mΩ • IDSmax,DC = 4.6 A / IDSmax,Pulse = 7.8 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V)
18	GS-065-011-6-LR	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ • IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Tra
19	GS-065-030-6-LR	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate
20	GS-065-011-6-L	GaN Systems	700V E-mode GaN transistor • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 125 mΩ • IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V)