GS-065-014-6-LR |
Part Number | GS-065-014-6-LR |
Manufacturer | GaN Systems |
Description | The GS-065-014-6-LR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS065-014-6-LR is a bottom-s. |
Features |
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95 mΩ • IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant GS-065-014-6-LR 700 V E-mode GaN transistor Datasheet Top View Bottom View Applicati. |
Datasheet |
GS-065-014-6-LR Data Sheet
PDF 837.86KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | GS-065-014-6-L |
GaN Systems |
700V E-mode GaN transistor | |
2 | GS-065-011-1-L |
GaN Systems |
650V E-mode GaN transistor | |
3 | GS-065-011-2-L |
GaN Systems |
650V E-mode GaN transistor | |
4 | GS-065-011-6-L |
GaN Systems |
700V E-mode GaN transistor | |
5 | GS-065-011-6-LR |
GaN Systems |
700V E-mode GaN transistor | |
6 | GS-065-018-2-L |
GaN Systems |
650V E-mode GaN transistor | |
7 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor | |
8 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor | |
9 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor | |
10 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor |