GS-065-008-6-L Datasheet. existencias, precio

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GS-065-008-6-L 700V E-mode GaN transistor

GS-065-008-6-L

GS-065-008-6-L
GS-065-008-6-L GS-065-008-6-L
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Part Number GS-065-008-6-L
Manufacturer GaN Systems
Description The GS-065-008-6-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS065-008-6-L is a bottom-side.
Features
• 700 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, small 5x6 mm PDFN package
• RDS(on) = 165 mΩ
• IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant GS-065-008-6-L 700 V E-mode GaN transistor Datasheet Package Outline Top view Circ.
Datasheet Datasheet GS-065-008-6-L Data Sheet
PDF 796.77KB
Distributor Stock Price Buy

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