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GS-065-030-2-L |
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| Part Number | GS-065-030-2-L |
| Manufacturer | GaN Systems |
| Description | The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065030-2-L is a bottom-side. |
| Features |
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 50 mΩ • IDS,max = 30 A / IDSmax,Pulse = 60 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant Top View Bottom View Applications • Bridgeless Totem Pole PFC • Consumer, Industrial and Datacenter High Densi. |
| Datasheet |
 GS-065-030-2-L Data Sheet
PDF 0.97MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GS-065-030-6-LL |
GaN Systems |
700V E-mode GaN transistor |
|
| 2 | GS-065-030-6-LR |
GaN Systems |
700V E-mode GaN transistor |
|
| 3 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 4 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 5 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 6 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 7 | GS-065-011-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 8 | GS-065-011-2-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 9 | GS-065-011-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 10 | GS-065-011-6-LR |
GaN Systems |
700V E-mode GaN transistor |
|
Desde 2024. D4U Semiconductor.
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