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GS-065-060-5-B-A |
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| Part Number | GS-065-060-5-B-A |
| Manufacturer | GaN Systems |
| Description | The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-c. |
| Features |
• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Bottom-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Small 11 x 9 mm2 PCB footprint • Dual gate pads for optimal board layout • RoHS 3 (6+4) compliant Package Outline top view Circuit Symbol The thermal pad is internally . |
| Datasheet |
 GS-065-060-5-B-A Data Sheet
PDF 1.24MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GS-065-060-5-T-A |
GaN Systems |
Automotive 650V GaN E-mode transistor |
|
| 2 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 3 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 4 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 5 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 6 | GS-065-011-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 7 | GS-065-011-2-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 8 | GS-065-011-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 9 | GS-065-011-6-LR |
GaN Systems |
700V E-mode GaN transistor |
|
| 10 | GS-065-014-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
Desde 2024. D4U Semiconductor.
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