| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS S |
|
|
|
|
Fairchild Semiconductor |
Dual-Host / Dual-SIM Card Crosspoint Analog Switch Switch Type Input Type Input Signal Range VCC RON RFLAT ESD CON COFF Package Ordering Information 2x2 Crosspoint Switch Data 0 to VCC 1.65V to 4.30V Data 2Ω (Typical) VSIM 2Ω (Typical) 0.6Ω (Typical) IEC 61000-4-2 System Air 15kV, Contact 8kV 28pF ( |
|
|
|
|
Fairchild Semiconductor |
2 X 2 LVDS High Speed Crosspoint Switch s Low jitter, 800 Mbps full differential data path s Worst case jitter of 190ps with PRBS = 223 − 1 data pattern at 800 Mbps s Rail-to-rail common mode range is 0.5V to 3.25V s Worst case power dissipation is less than 126 mW s Open-circuit fail safe |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series G |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) |
|
|
|
|
Fairchild Semiconductor |
SSP4N60 Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2. |
|
|
|
|
Fairchild Semiconductor |
SSP45N20B • • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maxim |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series G |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) SSP70N10A BVDSS = 100 V RDS(on) = 0.0 |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.800 Ω (Typ.) 1 2 3 SSP3N80A BVDSS = 800 V RDS(on) = |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area θ Lower Leakage Current : 25 µA (Max.) @ VDS = 900V SSP2N90A BVDSS = 900 V RDS(on) = 7.0 Ω ID = 2 A TO-220 Low RDS(ON |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = |
|
|
|
|
Fairchild Semiconductor |
532 Port Digital Crosspoint Switch s SRAM-based, in-system programmable s Configurable I/O Ports • Individually programmable as input, output, bi-directional, or Bus Repeater mode • Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighb |
|
|
|
|
Fairchild Semiconductor |
advanced power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A TO-220 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2. |
|
|
|
|
Fairchild Semiconductor |
Advanced Power MOSFET ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ.) Absolute Maximum Ratings |
|
Desde 2024. D4U Semiconductor.
|