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SSP1N60B |
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| Part Number | SSP1N60B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP1N60B 600 1.0 0.6 3.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS1N60B 1.0 * 0.6 * 3.0 * 50 1.0 3.4 5.5 Units V A ... |
| Document |
 SSP1N60B Data Sheet
PDF 879.19KB |
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