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SSP5N60A |
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| Part Number | SSP5N60A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET SSP5N60A FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage C... |
| Features |
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power... |
| Document |
 SSP5N60A Data Sheet
PDF 227.07KB |
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Desde 2024. D4U Semiconductor.
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