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SSP70N10A |
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| Part Number | SSP70N10A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.)
SSP70N10A
BVDSS = 100 V RDS(on) = 0.023 Ω ID = 55 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 55 38.9
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source ... |
| Document |
 SSP70N10A Data Sheet
PDF 641.68KB |
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Desde 2024. D4U Semiconductor.
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