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SSP2N60A |
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| Part Number | SSP2N60A |
| Manufacturer | Fairchild Semiconductor |
| Description | www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Cur... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.)
1 2 3
SSP2N60A
BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak D... |
| Document |
 SSP2N60A Data Sheet
PDF 444.91KB |
Similar Datasheet
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| 1 | SSP2N60B |
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| 2 | SSP2N90A |
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Desde 2024. D4U Semiconductor.
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