| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
MOSFET • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V • Low gate charge ( typical 85 nC) • Low Crss ( typical 150 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating GD S TO-247 FQH Series D ! |
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Fairchild Semiconductor |
MOSFET • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D G GD S TO-247 FQH Series |
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Fairchild Semiconductor |
MOSFET • 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V • Low Gate Charge (Typ. 53 nC) • Low Crss (Typ. 16 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC = 25°C |
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Fairchild Semiconductor |
MOSFET • 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested • 175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless othe |
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Fairchild Semiconductor |
100V N-Channel MOSFET • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating ® Description These N-Channel |
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Fairchild Semiconductor |
MOSFET • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating October 2005 QFET ® Descriptio |
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Fairchild Semiconductor |
MOSFET • 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field e |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 140A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 470 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO- |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-247 FQH Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating QFET Description October 2006 |
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Desde 2024. D4U Semiconductor.
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