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FQH8N100C |
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| Part Number | FQH8N100C |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V • Low Gate Charge (Typ. 53 nC) • Low Crss (Typ. 16 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 2... |
| Document |
 FQH8N100C Data Sheet
PDF 1.11MB |
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Desde 2024. D4U Semiconductor.
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