FQH90N15 |
Part Number | FQH90N15 |
Manufacturer | Fairchild Semiconductor |
Description | October 2006 ® These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especial... |
Features |
• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating QFET Description October 2006 ® These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These de... |
Document |
FQH90N15 Data Sheet
PDF 1.00MB |
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